N-Channel Power MOSFET featuring 600V drain-source breakdown voltage and 2.8A continuous drain current. This QFET® series component offers a maximum drain-source on-resistance of 2.5Ω and a 2.5W power dissipation. Designed for through-hole mounting in a TO-251-3 (IPAK) package, it operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 10ns turn-on delay and 38ns turn-off delay.
PackageTO-251-3
Current Rating5A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQU5N60CTU technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 2.8A |
| Current Rating | 5A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 2R |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 2.5R |
| Element Configuration | Single |
| Fall Time | 46ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 670pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Through Hole |
| Package Quantity | 70 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 2.5R |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 38ns |
| Turn-On Delay Time | 10ns |
| DC Rated Voltage | 600V |
| Weight | 0.34308g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQU5N60CTU Datasheet
Download the complete datasheet for Onsemi FQU5N60CTU to view detailed technical specifications.
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