N-channel MOSFET with 250V drain-source breakdown voltage and 4.4A continuous drain current. Features 1 Ohm Rds On Max, 30V gate-source voltage, and 300pF input capacitance. Operates from -55°C to 150°C with a maximum power dissipation of 45W. Packaged in TO-251-3 for through-hole mounting, this RoHS compliant component offers fast switching with turn-on delay time of 8ns and fall time of 30ns.
PackageTO-251-3
Current Rating4.4A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQU6N25TU technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 4.4A |
| Current Rating | 4.4A |
| Drain to Source Breakdown Voltage | 250V |
| Drain to Source Resistance | 1R |
| Drain to Source Voltage (Vdss) | 250V |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 300pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 45W |
| Mount | Through Hole |
| Package Quantity | 70 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 1R |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 7.5ns |
| Turn-On Delay Time | 8ns |
| DC Rated Voltage | 250V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQU6N25TU Datasheet
Download the complete datasheet for Onsemi FQU6N25TU to view detailed technical specifications.
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