The FQU6N50CTU is a high-power N-channel MOSFET with a maximum operating temperature range of -55°C to 150°C. It features a drain-to-source breakdown voltage of 500V and a continuous drain current of 4.5A. The device is packaged in a TO-251-3 case and is suitable for through-hole mounting. The FQU6N50CTU has a maximum power dissipation of 61W and a maximum operating temperature of 150°C.
PackageTO-251-3
Current Rating4.5A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQU6N50CTU technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 4.5A |
| Current Rating | 4.5A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 1.2R |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 45ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 700pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 61W |
| Mount | Through Hole |
| Package Quantity | 70 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Rds On Max | 1.2R |
| Series | QFET® |
| Turn-Off Delay Time | 55ns |
| DC Rated Voltage | 500V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQU6N50CTU Datasheet
Download the complete datasheet for Onsemi FQU6N50CTU to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.