ONSEMI

FQU6P25TU

Datasheet

Onsemi

FQU6P25TU

Name: FQU6P25TU Onsemi
Brand: Onsemi
SKU: FQU6P25TU

P-CH MOSFET 250V 4.7A 1.1R TO-251-3

P-channel MOSFET featuring a 250V drain-source breakdown voltage and 4.7A continuous drain current. This through-hole component offers a low 1.1 Ohm drain-source on-resistance and is housed in a TO-251-3 (IPAK) package. Key electrical characteristics include a 30V gate-source voltage rating, 780pF input capacitance, and fast switching times with turn-on delay of 13ns and fall time of 50ns. Maximum power dissipation is rated at 55W, with operating temperatures ranging from -55°C to 150°C. This RoHS compliant and lead-free component is supplied in rail/tube packaging.

PackageTO-251-3

Current Rating-4.7A

MountingThrough Hole

PolarityP-CHANNEL

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Technical Specifications

Onsemi FQU6P25TU technical specifications.

General

Package/Case	TO-251-3
Continuous Drain Current (ID)	4.7A
Current Rating	-4.7A
Drain to Source Breakdown Voltage	-250V
Drain to Source Resistance	1.1R
Drain to Source Voltage (Vdss)	250V
Fall Time	50ns
Gate to Source Voltage (Vgs)	30V
Input Capacitance	780pF
Lead Free	Lead Free
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	55W
Mount	Through Hole
Package Quantity	70
Packaging	Rail/Tube
Polarity	P-CHANNEL
Power Dissipation	2.5W
Radiation Hardening	No
Rds On Max	1.1R
RoHS Compliant	Yes
Series	QFET®
Turn-Off Delay Time	40ns
Turn-On Delay Time	13ns
DC Rated Voltage	-250V