P-Channel Power MOSFET, IPAK package, featuring a -100V drain-source breakdown voltage and a continuous drain current of 6.6A. This single element MOSFET offers a low on-resistance of 410mΩ (typical) and 530mΩ (maximum). Designed for through-hole mounting, it operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 2.5W. The component exhibits a fall time of 35ns and a turn-off delay time of 20ns, with an input capacitance of 470pF. This RoHS compliant, lead-free component is supplied in a 5040-piece rail/tube.
PackageTO-251-3
Current Rating-6.7A
MountingThrough Hole
PolarityP-CHANNEL
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Technical Specifications
Onsemi FQU8P10TU technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 6.6A |
| Current Rating | -6.7A |
| Drain to Source Breakdown Voltage | -100V |
| Drain to Source Resistance | 410mR |
| Drain to Source Voltage (Vdss) | 100V |
| Element Configuration | Single |
| Fall Time | 35ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 470pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Through Hole |
| Package Quantity | 5040 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.5W |
| Rds On Max | 530mR |
| RoHS Compliant | Yes |
| Series | QFET™ |
| Turn-Off Delay Time | 20ns |
| DC Rated Voltage | -100V |
| Weight | 0.34308g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQU8P10TU Datasheet
Download the complete datasheet for Onsemi FQU8P10TU to view detailed technical specifications.
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