NPN Bipolar Junction Transistor (BJT) for surface mount applications. Features a 25V collector-emitter voltage (VCEO) and a 3A maximum collector current. Offers a low saturation voltage of 600mV and a minimum DC current gain (hFE) of 100. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 500mW. Packaged in a TO-236-3 case, supplied on a 3000-piece tape and reel. Lead-free and RoHS compliant.
PackageTO-236-3
Current Rating3A
MountingSurface Mount
PolarityNPN
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Technical Specifications
Onsemi FSB649 technical specifications.
General
| Package/Case | TO-236-3 |
| Collector Base Voltage (VCBO) | 35V |
| Collector Emitter Breakdown Voltage | 25V |
| Collector Emitter Saturation Voltage | 600mV |
| Collector Emitter Voltage (VCEO) | 25V |
| Collector-emitter Voltage-Max | 600mV |
| Current Rating | 3A |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 25V |
| Max Collector Current | 3A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 500mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | FSB649 |
| Transition Frequency | 150MHz |
| DC Rated Voltage | 25V |
| Weight | 0.03g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FSB649 Datasheet
Download the complete datasheet for Onsemi FSB649 to view detailed technical specifications.
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