PNP Bipolar Junction Transistor (BJT) for surface mount applications. Features a maximum collector current of 2A and a collector-emitter breakdown voltage of 60V. Offers a low saturation voltage of 300mV and a transition frequency of 75MHz. Packaged in a TO-261-4 (R-PDSO-G3) rectangular plastic case with gull wing terminals, supplied on a 3000-piece tape and reel. Operates across a temperature range of -55°C to 150°C.
Frequency75MHz
PackageTO-261-4
Current Rating-2A
MountingSurface Mount
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Technical Specifications
Onsemi FSB660A technical specifications.
General
| Package/Case | TO-261-4 |
| Collector Base Voltage (VCBO) | -60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 300mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 300mV |
| Current Rating | -2A |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 75MHz |
| Gain Bandwidth Product | 75MHz |
| Height | 0.94mm |
| hFE Min | 250 |
| JESD-30 Code | R-PDSO-G3 |
| Lead Free | Lead Free |
| Length | 2.92mm |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 2A |
| Max Frequency | 75MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Moisture Sensitivity Level | 1 |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Body Material | Plastic |
| Package Quantity | 3000 |
| Package Shape | Rectangular |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 500mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Surface Mount | Yes |
| Terminal Finish | Tin |
| Terminal Form | Gull Wing |
| Terminal Position | DUAL |
| Transition Frequency | 75MHz |
| DC Rated Voltage | -60V |
| Weight | 0.03g |
| Width | 1.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FSB660A Datasheet
Download the complete datasheet for Onsemi FSB660A to view detailed technical specifications.
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