The FSBM15SM60A is a 600V insulated gate bipolar transistor (IGBT) module from Onsemi, featuring a collector-emitter breakdown voltage of 600V and a saturation voltage of 2.3V. It can handle a maximum current of 15A and a power dissipation of 50W. The module is packaged in a through-hole configuration and is compliant with RoHS regulations. It is available in a quantity of 48 per rail/tube packaging. The FSBM15SM60A is suitable for use in high-power applications that require a high voltage and current rating.
PackageModule
Voltage600V
Current15A
MountingThrough Hole
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Technical Specifications
Onsemi FSBM15SM60A technical specifications.
General
| Package/Case | Module |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.3V |
| Collector-emitter Voltage-Max | 600V |
| Current | 15A |
| Lead Free | Lead Free |
| Mount | Through Hole |
| Package Quantity | 48 |
| Packaging | Rail/Tube |
| Power Dissipation | 50W |
| RoHS Compliant | Yes |
| Series | SPM® |
| Voltage | 600V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FSBM15SM60A Datasheet
Download the complete datasheet for Onsemi FSBM15SM60A to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.