The FSEZ1216BNY is a 600V N-Channel JFET with a continuous drain current of 1A. It features a drain to source breakdown voltage of 600V and a drain to source resistance of 9.3 ohms. The device is lead free and has a maximum operating temperature of 105°C. It is suitable for use in a variety of applications, including audio and power amplifier circuits. The FSEZ1216BNY is packaged in a DIP package and is available in quantities of 59. It can be mounted through a hole and has a maximum power dissipation of 800mW.
Frequency50kHz
PackageDIP
MountingThrough Hole
Power800mW
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Technical Specifications
Onsemi FSEZ1216BNY technical specifications.
General
| Package/Case | DIP |
| Continuous Drain Current (ID) | 1A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 9.3R |
| Lead Free | Lead Free |
| Max Duty Cycle | 0.75% |
| Max Frequency | 50kHz |
| Max Operating Temperature | 105°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 800mW |
| Max Supply Current | 5mA |
| Max Supply Voltage | 30V |
| Min Supply Voltage | 4.5V |
| Mount | Through Hole |
| Operating Supply Voltage | 25V |
| Package Quantity | 59 |
| Packaging | Rail/Tube |
| Power Dissipation | 800mW |
| Turn-Off Delay Time | 13ns |
| Weight | 0.93g |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FSEZ1216BNY Datasheet
Download the complete datasheet for Onsemi FSEZ1216BNY to view detailed technical specifications.
No datasheet is available for this part.
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