The H21A6 phototransistor is a phototransistor with a collector-emitter breakdown voltage of 55V and a maximum collector current of 20mA. It operates within a temperature range of -55°C to 100°C and has a response time of 50us. The device is packaged in a rail/Tube package and is RoHS compliant. The phototransistor is designed for through hole mounting with flanges and screw terminals. It has a maximum power dissipation of 150mW and an operating supply voltage of 1.7V.
MountingThrough Hole, Flanges, Screw
Power150mW
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Technical Specifications
Onsemi H21A6 technical specifications.
General
| Collector Emitter Breakdown Voltage | 55V |
| Collector Emitter Voltage (VCEO) | 55V |
| Collector-emitter Voltage-Max | 55V |
| Forward Current | 50mA |
| Input Current | 60mA |
| Max Collector Current | 20mA |
| Max Operating Temperature | 100°C |
| Min Operating Temperature | -55°C |
| Mount | Through Hole, Flanges, Screw |
| Number of Elements | 1 |
| Operating Supply Voltage | 1.7V |
| Output Configuration | Phototransistor |
| Output Voltage | 55V |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Power Dissipation | 150mW |
| Response Time | 50us |
| Reverse Breakdown Voltage | 6V |
| RoHS Compliant | Yes |
| DC Rated Voltage | 55V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi H21A6 Datasheet
Download the complete datasheet for Onsemi H21A6 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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