The H21B1 is a single-channel transistor with a collector-emitter breakdown voltage of 30V and a maximum operating temperature of 100°C. It has a maximum collector current of 40mA and a power dissipation of 150mW. The transistor is available in a through-hole package with flanges and is packaged in a rail or tube. It is not RoHS compliant and is not Reach SVHC compliant.
MountingThrough Hole, Flanges
Power150mW
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Technical Specifications
Onsemi H21B1 technical specifications.
General
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 30V |
| Forward Current | 50mA |
| Input Current | 60mA |
| Lead Free | Lead Free |
| Max Collector Current | 40mA |
| Max Operating Temperature | 100°C |
| Min Operating Temperature | -55°C |
| Mount | Through Hole, Flanges |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Operating Supply Voltage | 1.7V |
| Output Voltage | 30V |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Power Dissipation | 150mW |
| Reach SVHC Compliant | No |
| Response Time | 45us |
| Reverse Breakdown Voltage | 6V |
| RoHS Compliant | No |
| DC Rated Voltage | 30V |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi H21B1 Datasheet
Download the complete datasheet for Onsemi H21B1 to view detailed technical specifications.
No datasheet is available for this part.