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Technical Specifications
Onsemi HGT1S12N60A4DS technical specifications.
General
| Package/Case | TO-263-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.7V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.7V |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Collector Current | 54A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 167W |
| Mount | Surface Mount |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Power Dissipation | 167W |
| Radiation Hardening | No |
| Reverse Recovery Time | 18ns |
| RoHS Compliant | Yes |
| Series | HGT1S12N60 |
| Turn-Off Delay Time | 96us |
| Turn-On Delay Time | 17us |
| Weight | 1.31247g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi HGT1S12N60A4DS Datasheet
Download the complete datasheet for Onsemi HGT1S12N60A4DS to view detailed technical specifications.
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