The HGTD3N60C3S9A is a 600V insulated gate bipolar transistor (IGBT) with a maximum collector current rating of 6A. It features a TO-252-3 package and is designed for surface mount applications. The device operates within a temperature range of -40°C to 150°C and has a maximum power dissipation of 33W. The HGTD3N60C3S9A is compliant with RoHS regulations and is available in tape and reel packaging with 2500 units per package.
PackageTO-252-3
Current Rating6A
MountingSurface Mount
Power33W
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Technical Specifications
Onsemi HGTD3N60C3S9A technical specifications.
General
| Package/Case | TO-252-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.65V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2V |
| Current Rating | 6A |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Collector Current | 6A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 33W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Power Dissipation | 33W |
| RoHS Compliant | Yes |
| DC Rated Voltage | 600V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi HGTD3N60C3S9A Datasheet
Download the complete datasheet for Onsemi HGTD3N60C3S9A to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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