NPT Insulated Gate Bipolar Transistor (IGBT) with 1200V Collector-Emitter Breakdown Voltage and 35A Continuous Collector Current. Features a low Collector-Emitter Saturation Voltage of 2.45V and a maximum power dissipation of 298W. Designed for through-hole mounting in a TO-247-3 package, operating from -55°C to 150°C. This RoHS compliant component offers fast switching speeds with a turn-on delay of 23ns and turn-off delay of 165ns.
PackageTO-247-3
Current Rating35A
MountingThrough Hole
Power298W
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Technical Specifications
Onsemi HGTG10N120BND technical specifications.
General
| Package/Case | TO-247-3 |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 2.45V |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector-emitter Voltage-Max | 2.7V |
| Continuous Collector Current | 35A |
| Current Rating | 35A |
| Height | 20.82mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 15.87mm |
| Max Collector Current | 35A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 298W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Power Dissipation | 298W |
| Radiation Hardening | No |
| Reverse Recovery Time | 70ns |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 165ns |
| Turn-On Delay Time | 23ns |
| DC Rated Voltage | 1.2kV |
| Weight | 6.39g |
| Width | 4.82mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi HGTG10N120BND Datasheet
Download the complete datasheet for Onsemi HGTG10N120BND to view detailed technical specifications.
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