1200V NPT Insulated Gate Bipolar Transistor (IGBT) for high-power applications. Features a 1.2kV Collector Emitter Breakdown Voltage and 43A current rating. Offers a low Collector Emitter Saturation Voltage of 2.1V and a maximum power dissipation of 298W. Packaged in a TO-247 through-hole mount, this RoHS compliant component operates from -55°C to 150°C.
PackageTO-247
Current Rating43A
MountingThrough Hole
Power298W
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Technical Specifications
Onsemi HGTG11N120CND technical specifications.
General
| Package/Case | TO-247 |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 2.1V |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector-emitter Voltage-Max | 2.4V |
| Current Rating | 43A |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Collector Current | 43A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 298W |
| Mount | Through Hole |
| Package Quantity | 150 |
| Packaging | Rail/Tube |
| Power Dissipation | 298W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 70ns |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 180ns |
| Turn-On Delay Time | 23ns |
| DC Rated Voltage | 1.2kV |
| Weight | 6.39g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi HGTG11N120CND Datasheet
Download the complete datasheet for Onsemi HGTG11N120CND to view detailed technical specifications.
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