Insulated Gate Bipolar Transistor (IGBT) featuring a 600V Collector Emitter Breakdown Voltage and 60A Continuous Collector Current. This SMPS IGBT offers a low Collector Emitter Saturation Voltage of 2V and a maximum power dissipation of 167W. Designed for through-hole mounting in a TO-247 package, it operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 17ns turn-on delay and 96ns turn-off delay, with a 30ns reverse recovery time. This RoHS compliant component is supplied in a rail/tube package.
PackageTO-247
Current Rating54A
MountingThrough Hole
Power167W
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Technical Specifications
Onsemi HGTG12N60A4D technical specifications.
General
| Package/Case | TO-247 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.7V |
| Continuous Collector Current | 60A |
| Current Rating | 54A |
| Height | 20.82mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 15.87mm |
| Max Collector Current | 54A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 167W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Power Dissipation | 167W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 30ns |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 96ns |
| Turn-On Delay Time | 17ns |
| DC Rated Voltage | 600V |
| Weight | 6.39g |
| Width | 4.82mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi HGTG12N60A4D Datasheet
Download the complete datasheet for Onsemi HGTG12N60A4D to view detailed technical specifications.
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