Insulated Gate Bipolar Transistor (IGBT) featuring a 600V Collector Emitter Breakdown Voltage and 60A Continuous Collector Current. This SMPS IGBT offers a low Collector Emitter Saturation Voltage of 2V and a maximum power dissipation of 167W. Designed for through-hole mounting in a TO-247 package, it operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 17ns turn-on delay and 96ns turn-off delay, with a 30ns reverse recovery time. This RoHS compliant component is supplied in a rail/tube package.
PackageTO-247
Current Rating54A
MountingThrough Hole
Power167W
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Technical Specifications
Onsemi HGTG12N60A4D technical specifications.
General
Package/Case
TO-247
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2V
Collector Emitter Voltage (VCEO)
600V
Collector-emitter Voltage-Max
2.7V
Continuous Collector Current
60A
Current Rating
54A
Height
20.82mm
Input Type
STANDARD
Lead Free
Lead Free
Length
15.87mm
Max Collector Current
54A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
167W
Mount
Through Hole
Package Quantity
30
Packaging
Rail/Tube
Power Dissipation
167W
Radiation Hardening
No
Reach SVHC Compliant
No
Reverse Recovery Time
30ns
RoHS Compliant
Yes
Turn-Off Delay Time
96ns
Turn-On Delay Time
17ns
DC Rated Voltage
600V
Weight
6.39g
Width
4.82mm
Compliance
RoHS
Compliant
Datasheet
Onsemi HGTG12N60A4D Datasheet
Download the complete datasheet for Onsemi HGTG12N60A4D to view detailed technical specifications.
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