N-Channel Insulated Gate Bipolar Transistor (IGBT) with anti-parallel Hyperfast Diode. Features 600V collector-emitter breakdown voltage and 24A continuous collector current. Offers a low collector-emitter saturation voltage of 1.65V and a maximum power dissipation of 104W. Packaged in TO-247 for through-hole mounting, this RoHS compliant component operates from -40°C to 150°C.
PackageTO-247
Current Rating24A
MountingThrough Hole
Power104W
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Technical Specifications
Onsemi HGTG12N60C3D technical specifications.
General
Package/Case
TO-247
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.65V
Collector Emitter Voltage (VCEO)
600V
Collector-emitter Voltage-Max
2.2V
Current Rating
24A
Height
20.82mm
Input Type
STANDARD
Lead Free
Lead Free
Length
15.87mm
Max Collector Current
24A
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Max Power Dissipation
104W
Mount
Through Hole
Package Quantity
30
Packaging
Rail/Tube
Power Dissipation
104W
Radiation Hardening
No
Reach SVHC Compliant
No
Reverse Recovery Time
42ns
RoHS Compliant
Yes
Series
HGTG12N60
DC Rated Voltage
600V
Weight
6.39g
Width
4.82mm
Compliance
RoHS
Compliant
Datasheet
Onsemi HGTG12N60C3D Datasheet
Download the complete datasheet for Onsemi HGTG12N60C3D to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.