600V SMPS Insulated Gate Bipolar Transistor (IGBT) for through-hole mounting. Features a 600V Collector Emitter Breakdown Voltage, 70A Max Collector Current, and 1.8V Collector Emitter Saturation Voltage. Maximum power dissipation is 290W, with operating temperatures ranging from -55°C to 150°C. This RoHS compliant component offers a 15ns turn-on delay and 73ns turn-off delay.
PackageTO-247
Current Rating70A
MountingThrough Hole
Power290W
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Technical Specifications
Onsemi HGTG20N60A4D technical specifications.
General
| Package/Case | TO-247 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.8V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.7V |
| Current Rating | 70A |
| Height | 20.82mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 15.87mm |
| Max Breakdown Voltage | 600V |
| Max Collector Current | 70A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 290W |
| Mount | Through Hole |
| Package Quantity | 150 |
| Packaging | Rail/Tube |
| Power Dissipation | 290W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 35ns |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 73ns |
| Turn-On Delay Time | 15ns |
| DC Rated Voltage | 600V |
| Weight | 6.39g |
| Width | 4.82mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi HGTG20N60A4D Datasheet
Download the complete datasheet for Onsemi HGTG20N60A4D to view detailed technical specifications.
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