High-performance Insulated Gate Bipolar Transistor (IGBT) featuring a 600V Collector Emitter Breakdown Voltage and 600V DC Rated Voltage. This NPN polarity transistor offers a continuous collector current of 40A and a maximum power dissipation of 165W. Designed for through-hole mounting in a TO-247 package, it operates within a temperature range of -40°C to 150°C with a low collector emitter saturation voltage of 1.8V. Key switching characteristics include a 25ns turn-on delay and a 220ns turn-off delay.
PackageTO-247
Current Rating40A
MountingThrough Hole
PolarityNPN
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Technical Specifications
Onsemi HGTG20N60B3 technical specifications.
General
| Package/Case | TO-247 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.8V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2V |
| Continuous Collector Current | 40A |
| Current Rating | 40A |
| Height | 24.75mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Collector Current | 40A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 165W |
| Mount | Through Hole |
| Package Quantity | 150 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 165W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 220ns |
| Turn-On Delay Time | 25ns |
| DC Rated Voltage | 600V |
| Weight | 6.39g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi HGTG20N60B3 Datasheet
Download the complete datasheet for Onsemi HGTG20N60B3 to view detailed technical specifications.
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