600V NPN Insulated Gate Bipolar Transistor (IGBT) for through-hole mounting in a TO-247 package. Features a 600V collector-emitter breakdown voltage, 1.8V collector-emitter saturation voltage, and 40A continuous collector current. Offers a maximum power dissipation of 165W and operates within a temperature range of -40°C to 150°C. Includes a 25ns turn-on delay time and 220ns turn-off delay time, with a 55ns reverse recovery time. RoHS compliant and lead-free.
PackageTO-247
Current Rating20A
MountingThrough Hole
PolarityNPN
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Technical Specifications
Onsemi HGTG20N60B3D technical specifications.
General
Package/Case
TO-247
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.8V
Collector Emitter Voltage (VCEO)
600V
Collector-emitter Voltage-Max
2V
Continuous Collector Current
40A
Current Rating
20A
Height
24.75mm
Input Type
STANDARD
Lead Free
Lead Free
Max Breakdown Voltage
600V
Max Collector Current
40A
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Max Power Dissipation
165W
Mount
Through Hole
Package Quantity
150
Packaging
Rail/Tube
Polarity
NPN
Power Dissipation
165W
Radiation Hardening
No
Reach SVHC Compliant
No
Reverse Recovery Time
55ns
RoHS Compliant
Yes
Turn-Off Delay Time
220ns
Turn-On Delay Time
25ns
DC Rated Voltage
600V
Weight
6.39g
Compliance
RoHS
Compliant
Datasheet
Onsemi HGTG20N60B3D Datasheet
Download the complete datasheet for Onsemi HGTG20N60B3D to view detailed technical specifications.
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