600V Insulated Gate Bipolar Transistor (IGBT) for Switched-Mode Power Supplies (SMPS). Features a 600V Collector Emitter Breakdown Voltage and 30A Current Rating, with a maximum collector current of 75A. Offers a low Collector Emitter Saturation Voltage of 1.8V and a maximum power dissipation of 463W. Packaged in a TO-247 through-hole mount, this RoHS compliant component operates from -55°C to 150°C. Includes a 55ns reverse recovery time and 25ns turn-on delay.
PackageTO-247
Current Rating30A
MountingThrough Hole
Power463W
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Technical Specifications
Onsemi HGTG30N60A4D technical specifications.
General
Package/Case
TO-247
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.8V
Collector Emitter Voltage (VCEO)
600V
Collector-emitter Voltage-Max
2.6V
Current Rating
30A
Height
20.82mm
Input Type
STANDARD
Lead Free
Lead Free
Length
15.87mm
Max Collector Current
75A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
463W
Mount
Through Hole
Package Quantity
150
Packaging
Rail/Tube
Power Dissipation
463W
Radiation Hardening
No
Reach SVHC Compliant
No
Reverse Recovery Time
55ns
RoHS Compliant
Yes
Turn-Off Delay Time
150ns
Turn-On Delay Time
25ns
DC Rated Voltage
600V
Weight
6.39g
Width
4.82mm
Compliance
RoHS
Compliant
Datasheet
Onsemi HGTG30N60A4D Datasheet
Download the complete datasheet for Onsemi HGTG30N60A4D to view detailed technical specifications.
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