600V Insulated Gate Bipolar Transistor (IGBT) for Switched-Mode Power Supplies (SMPS). Features a 600V Collector Emitter Breakdown Voltage and 30A Current Rating, with a maximum collector current of 75A. Offers a low Collector Emitter Saturation Voltage of 1.8V and a maximum power dissipation of 463W. Packaged in a TO-247 through-hole mount, this RoHS compliant component operates from -55°C to 150°C. Includes a 55ns reverse recovery time and 25ns turn-on delay.
PackageTO-247
Current Rating30A
MountingThrough Hole
Power463W
Quick Jump:
Technical Specifications
Onsemi HGTG30N60A4D technical specifications.
General
| Package/Case | TO-247 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.8V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.6V |
| Current Rating | 30A |
| Height | 20.82mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 15.87mm |
| Max Collector Current | 75A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 463W |
| Mount | Through Hole |
| Package Quantity | 150 |
| Packaging | Rail/Tube |
| Power Dissipation | 463W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 55ns |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 150ns |
| Turn-On Delay Time | 25ns |
| DC Rated Voltage | 600V |
| Weight | 6.39g |
| Width | 4.82mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi HGTG30N60A4D Datasheet
Download the complete datasheet for Onsemi HGTG30N60A4D to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
