Insulated Gate Bipolar Transistor (IGBT) with a 600V Collector Emitter Breakdown Voltage and 60A Continuous Collector Current. Features a low 1.45V Collector Emitter Saturation Voltage and 208W Max Power Dissipation. Packaged in a TO-247 through-hole mount, this NPN polarity device operates from -55°C to 150°C and is RoHS compliant.
PackageTO-247
Current Rating60A
MountingThrough Hole
PolarityNPN
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Technical Specifications
Onsemi HGTG30N60B3 technical specifications.
General
| Package/Case | TO-247 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.45V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 1.9V |
| Continuous Collector Current | 60A |
| Current Rating | 60A |
| Height | 20.82mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 15.87mm |
| Max Breakdown Voltage | 600V |
| Max Collector Current | 60A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 208W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 208W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 600V |
| Weight | 6.39g |
| Width | 4.82mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi HGTG30N60B3 Datasheet
Download the complete datasheet for Onsemi HGTG30N60B3 to view detailed technical specifications.
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