600V, 30A NPN Insulated Gate Bipolar Transistor (IGBT) in a TO-247 package. Features a 1.5V collector-emitter saturation voltage, 63A maximum collector current, and 208W maximum power dissipation. Operates from -40°C to 150°C with a 60ns reverse recovery time and 40ns turn-on delay. Through-hole mount design, lead-free, and RoHS compliant.
PackageTO-247
Current Rating30A
MountingThrough Hole
PolarityNPN
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Technical Specifications
Onsemi HGTG30N60C3D technical specifications.
General
Package/Case
TO-247
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.5V
Collector Emitter Voltage (VCEO)
600V
Collector-emitter Voltage-Max
1.8V
Current Rating
30A
Height
20.82mm
Input Type
STANDARD
Lead Free
Lead Free
Length
15.87mm
Max Collector Current
63A
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Max Power Dissipation
208W
Mount
Through Hole
Package Quantity
150
Packaging
Rail/Tube
Polarity
NPN
Power Dissipation
208W
Radiation Hardening
No
Reach SVHC Compliant
No
Reverse Recovery Time
60ns
RoHS Compliant
Yes
Turn-Off Delay Time
320ns
Turn-On Delay Time
40ns
DC Rated Voltage
600V
Weight
6.39g
Width
4.82mm
Compliance
RoHS
Compliant
Datasheet
Onsemi HGTG30N60C3D Datasheet
Download the complete datasheet for Onsemi HGTG30N60C3D to view detailed technical specifications.
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