600V, 30A NPN Insulated Gate Bipolar Transistor (IGBT) in a TO-247 package. Features a 1.5V collector-emitter saturation voltage, 63A maximum collector current, and 208W maximum power dissipation. Operates from -40°C to 150°C with a 60ns reverse recovery time and 40ns turn-on delay. Through-hole mount design, lead-free, and RoHS compliant.
PackageTO-247
Current Rating30A
MountingThrough Hole
PolarityNPN
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Technical Specifications
Onsemi HGTG30N60C3D technical specifications.
General
| Package/Case | TO-247 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.5V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 1.8V |
| Current Rating | 30A |
| Height | 20.82mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 15.87mm |
| Max Collector Current | 63A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 208W |
| Mount | Through Hole |
| Package Quantity | 150 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 208W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 60ns |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 320ns |
| Turn-On Delay Time | 40ns |
| DC Rated Voltage | 600V |
| Weight | 6.39g |
| Width | 4.82mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi HGTG30N60C3D Datasheet
Download the complete datasheet for Onsemi HGTG30N60C3D to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.