High-performance Insulated Gate Bipolar Transistor (IGBT) with a 600V Collector Emitter Breakdown Voltage. Features a 70A Continuous Collector Current and a 1.4V Collector Emitter Saturation Voltage. This through-hole mounted component is packaged in a TO-247 case and offers a maximum power dissipation of 290W. Operates across a temperature range of -55°C to 150°C, with a turn-on delay of 47ns and turn-off delay of 170ns. RoHS compliant and lead-free.
PackageTO-247
Current Rating70A
MountingThrough Hole
Power290W
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Technical Specifications
Onsemi HGTG40N60B3 technical specifications.
General
Package/Case
TO-247
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.4V
Collector Emitter Voltage (VCEO)
600V
Collector-emitter Voltage-Max
2V
Continuous Collector Current
70A
Current Rating
70A
Height
20.82mm
Input Type
STANDARD
Lead Free
Lead Free
Length
15.87mm
Max Breakdown Voltage
600V
Max Collector Current
70A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
290W
Mount
Through Hole
Package Quantity
30
Packaging
Rail/Tube
Power Dissipation
290W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Turn-Off Delay Time
170ns
Turn-On Delay Time
47ns
DC Rated Voltage
600V
Weight
6.39g
Width
4.82mm
Compliance
RoHS
Compliant
Datasheet
Onsemi HGTG40N60B3 Datasheet
Download the complete datasheet for Onsemi HGTG40N60B3 to view detailed technical specifications.
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