High-performance Insulated Gate Bipolar Transistor (IGBT) with a 600V Collector Emitter Breakdown Voltage. Features a 70A Continuous Collector Current and a 1.4V Collector Emitter Saturation Voltage. This through-hole mounted component is packaged in a TO-247 case and offers a maximum power dissipation of 290W. Operates across a temperature range of -55°C to 150°C, with a turn-on delay of 47ns and turn-off delay of 170ns. RoHS compliant and lead-free.
PackageTO-247
Current Rating70A
MountingThrough Hole
Power290W
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Technical Specifications
Onsemi HGTG40N60B3 technical specifications.
General
| Package/Case | TO-247 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.4V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2V |
| Continuous Collector Current | 70A |
| Current Rating | 70A |
| Height | 20.82mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 15.87mm |
| Max Breakdown Voltage | 600V |
| Max Collector Current | 70A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 290W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Power Dissipation | 290W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 170ns |
| Turn-On Delay Time | 47ns |
| DC Rated Voltage | 600V |
| Weight | 6.39g |
| Width | 4.82mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi HGTG40N60B3 Datasheet
Download the complete datasheet for Onsemi HGTG40N60B3 to view detailed technical specifications.
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