High-performance Insulated Gate Bipolar Transistor (IGBT) designed for Switched-Mode Power Supply (SMPS) applications. Features a 600V collector-emitter breakdown voltage and a continuous collector current rating of 54A. Offers a low collector-emitter saturation voltage of 2V and a maximum power dissipation of 167W. Packaged in a TO-220AB through-hole mount with a reverse recovery time of 18ns and turn-on/off delay times of 17ns and 96ns respectively. RoHS compliant and lead-free.
PackageTO-220AB
Current Rating54A
MountingThrough Hole
Power167W
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Technical Specifications
Onsemi HGTP12N60A4D technical specifications.
General
| Package/Case | TO-220AB |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.7V |
| Continuous Collector Current | 54A |
| Current Rating | 54A |
| Height | 9.4mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Collector Current | 54A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 167W |
| Mount | Through Hole |
| Package Quantity | 400 |
| Packaging | Rail/Tube |
| Power Dissipation | 167W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 18ns |
| RoHS Compliant | Yes |
| Series | HGTP12N60A4D |
| Turn-Off Delay Time | 96ns |
| Turn-On Delay Time | 17ns |
| DC Rated Voltage | 600V |
| Weight | 1.8g |
| Width | 4.83mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi HGTP12N60A4D Datasheet
Download the complete datasheet for Onsemi HGTP12N60A4D to view detailed technical specifications.
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