High-performance Insulated Gate Bipolar Transistor (IGBT) designed for Switched-Mode Power Supply (SMPS) applications. Features a 600V collector-emitter breakdown voltage and a continuous collector current rating of 54A. Offers a low collector-emitter saturation voltage of 2V and a maximum power dissipation of 167W. Packaged in a TO-220AB through-hole mount with a reverse recovery time of 18ns and turn-on/off delay times of 17ns and 96ns respectively. RoHS compliant and lead-free.
PackageTO-220AB
Current Rating54A
MountingThrough Hole
Power167W
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Technical Specifications
Onsemi HGTP12N60A4D technical specifications.
General
Package/Case
TO-220AB
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2V
Collector Emitter Voltage (VCEO)
600V
Collector-emitter Voltage-Max
2.7V
Continuous Collector Current
54A
Current Rating
54A
Height
9.4mm
Input Type
STANDARD
Lead Free
Lead Free
Length
10.67mm
Max Collector Current
54A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
167W
Mount
Through Hole
Package Quantity
400
Packaging
Rail/Tube
Power Dissipation
167W
Radiation Hardening
No
Reach SVHC Compliant
No
Reverse Recovery Time
18ns
RoHS Compliant
Yes
Series
HGTP12N60A4D
Turn-Off Delay Time
96ns
Turn-On Delay Time
17ns
DC Rated Voltage
600V
Weight
1.8g
Width
4.83mm
Compliance
RoHS
Compliant
Datasheet
Onsemi HGTP12N60A4D Datasheet
Download the complete datasheet for Onsemi HGTP12N60A4D to view detailed technical specifications.
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