1200V NPT Insulated Gate Bipolar Transistor (IGBT) in a TO-220-3 package. Features a 1.2kV Collector Emitter Breakdown Voltage and a 2.45V Collector Emitter Saturation Voltage. Offers a continuous collector current of 21A with a maximum power dissipation of 167W. Operates across a temperature range of -55°C to 150°C. Through-hole mounting and RoHS compliant.
PackageTO-220-3
Current Rating21A
MountingThrough Hole
Power167W
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Technical Specifications
Onsemi HGTP5N120BND technical specifications.
General
Package/Case
TO-220-3
Collector Emitter Breakdown Voltage
1.2kV
Collector Emitter Saturation Voltage
2.45V
Collector Emitter Voltage (VCEO)
1.2kV
Collector-emitter Voltage-Max
2.7V
Continuous Collector Current
21A
Current Rating
21A
Height
9.4mm
Input Type
STANDARD
Lead Free
Lead Free
Length
10.67mm
Max Collector Current
21A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
167W
Mount
Through Hole
Package Quantity
400
Packaging
Rail/Tube
Power Dissipation
167W
Radiation Hardening
No
Reverse Recovery Time
30ns
RoHS Compliant
Yes
Series
HGTP5N120BND
DC Rated Voltage
1.2kV
Weight
1.8g
Width
4.83mm
Compliance
RoHS
Compliant
Datasheet
Onsemi HGTP5N120BND Datasheet
Download the complete datasheet for Onsemi HGTP5N120BND to view detailed technical specifications.
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