1200V NPT Insulated Gate Bipolar Transistor (IGBT) in a TO-220-3 package. Features a 1.2kV Collector Emitter Breakdown Voltage and a 2.45V Collector Emitter Saturation Voltage. Offers a continuous collector current of 21A with a maximum power dissipation of 167W. Operates across a temperature range of -55°C to 150°C. Through-hole mounting and RoHS compliant.
PackageTO-220-3
Current Rating21A
MountingThrough Hole
Power167W
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Technical Specifications
Onsemi HGTP5N120BND technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 2.45V |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector-emitter Voltage-Max | 2.7V |
| Continuous Collector Current | 21A |
| Current Rating | 21A |
| Height | 9.4mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Collector Current | 21A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 167W |
| Mount | Through Hole |
| Package Quantity | 400 |
| Packaging | Rail/Tube |
| Power Dissipation | 167W |
| Radiation Hardening | No |
| Reverse Recovery Time | 30ns |
| RoHS Compliant | Yes |
| Series | HGTP5N120BND |
| DC Rated Voltage | 1.2kV |
| Weight | 1.8g |
| Width | 4.83mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi HGTP5N120BND Datasheet
Download the complete datasheet for Onsemi HGTP5N120BND to view detailed technical specifications.
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