Dual NPN/PNP Bipolar Junction Transistor (BJT) in a compact SC-74 (SC-59ML) 6-lead package. Features a Collector-Emitter Voltage (VCEO) of 50V and a maximum Collector Current of 200mA. Offers a minimum DC current gain (hFE) of 200 and a low Collector-Emitter Saturation Voltage of -150mV. Operates across a wide temperature range from -55°C to 150°C with a power dissipation of 380mW. Supplied on a 3000-piece tape and reel, this RoHS compliant component is lead-free.
PackageSC
Current Rating200mA
PolarityNPN, PNP
Power380mW
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Technical Specifications
Onsemi HN1B01FDW1T1G technical specifications.
General
| Package/Case | SC |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Saturation Voltage | -150mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 50V |
| Current Rating | 200mA |
| Emitter Base Voltage (VEBO) | 7V |
| Height | 1.1mm |
| hFE Min | 200 |
| Lead Free | Lead Free |
| Length | 3.1mm |
| Max Collector Current | 200mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 380mW |
| Number of Elements | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN, PNP |
| Power Dissipation | 380mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | HN1B01FDW1 |
| DC Rated Voltage | -60V |
| Width | 1.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi HN1B01FDW1T1G Datasheet
Download the complete datasheet for Onsemi HN1B01FDW1T1G to view detailed technical specifications.
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