
N-channel MOSFET with 55V drain-source breakdown voltage and 15A continuous drain current. Features low 90mΩ Rds(on) at 4V Vgs, 45W max power dissipation, and 175°C max operating temperature. Surface mount TO-252AA package with 45ns turn-on and 35ns turn-off delay times. RoHS compliant and lead-free.
Onsemi HUF75307D3ST technical specifications.
| Package/Case | TO-252AA |
| Continuous Drain Current (ID) | 15A |
| Current Rating | 15A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Resistance | 90mR |
| Drain to Source Voltage (Vdss) | 55V |
| Dual Supply Voltage | 55V |
| Fall Time | 45ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 250pF |
| Lead Free | Lead Free |
| Lead Length | 9.65mm |
| Lead Pitch | 2.28mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 45W |
| Mount | Surface Mount |
| Nominal Vgs | 4V |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 45W |
| Rds On Max | 90mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | UltraFET™ |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 40ns |
| DC Rated Voltage | 55V |
| RoHS | Compliant |
Download the complete datasheet for Onsemi HUF75307D3ST to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
