The HUF75309P3 is an N-channel MOSFET with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 55W and a continuous drain current of 19A. The device is packaged in a TO-220-3 package and is lead-free and RoHS compliant. It has an input capacitance of 350pF and a gate to source voltage of 20V.
PackageTO-220-3
Current Rating19A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi HUF75309P3 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 19A |
| Current Rating | 19A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Resistance | 70mR |
| Drain to Source Voltage (Vdss) | 55V |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 350pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 55W |
| Mount | Through Hole |
| Package Quantity | 400 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 55W |
| Rds On Max | 70mR |
| RoHS Compliant | Yes |
| Series | UltraFET™ |
| Turn-Off Delay Time | 24ns |
| DC Rated Voltage | 55V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi HUF75309P3 Datasheet
Download the complete datasheet for Onsemi HUF75309P3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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