N-Channel UltraFET Power MOSFET featuring 55V drain-source breakdown voltage and 35A continuous drain current. This single element transistor offers a low 34mΩ drain-source on-resistance and 93W maximum power dissipation. Designed for through-hole mounting in a TO-220AB package, it operates from -55°C to 175°C and boasts fast switching characteristics with a 11ns turn-on delay. Lead-free and RoHS compliant, this component is supplied in a rail/tube package.
PackageTO-220AB
Current Rating35A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi HUF75321P3 technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 35A |
| Current Rating | 35A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Resistance | 34mR |
| Drain to Source Voltage (Vdss) | 55V |
| Drain-source On Resistance-Max | 34MR |
| Element Configuration | Single |
| Fall Time | 66ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 16.3mm |
| Input Capacitance | 680pF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 93W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 93W |
| Rds On Max | 34mR |
| RoHS Compliant | Yes |
| Series | UltraFET™ |
| Turn-Off Delay Time | 47ns |
| Turn-On Delay Time | 11ns |
| DC Rated Voltage | 55V |
| Weight | 1.8g |
| Width | 4.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi HUF75321P3 Datasheet
Download the complete datasheet for Onsemi HUF75321P3 to view detailed technical specifications.
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