
N-Channel UltraFET Power MOSFET, 55V Drain to Source Breakdown Voltage, 20A Continuous Drain Current, and 26mΩ Max Drain to Source On Resistance. This single-element transistor features a TO-252AA surface mount package, 128W maximum power dissipation, and operates within a temperature range of -55°C to 175°C. Key switching characteristics include a 7ns turn-on delay and 33ns fall time. The component is RoHS compliant and supplied on a 2500-piece tape and reel.
Onsemi HUF75329D3ST technical specifications.
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