ONSEMI

HUF75329D3ST

Datasheet

N-Ch MOSFET 55V 20A 26mR TO-252AA Surface Mount

Onsemi

HUF75329D3ST

Name: HUF75329D3ST Onsemi
Brand: Onsemi
SKU: HUF75329D3ST

N-Ch MOSFET 55V 20A 26mR TO-252AA Surface Mount

N-Channel UltraFET Power MOSFET, 55V Drain to Source Breakdown Voltage, 20A Continuous Drain Current, and 26mΩ Max Drain to Source On Resistance. This single-element transistor features a TO-252AA surface mount package, 128W maximum power dissipation, and operates within a temperature range of -55°C to 175°C. Key switching characteristics include a 7ns turn-on delay and 33ns fall time. The component is RoHS compliant and supplied on a 2500-piece tape and reel.

PackageTO-252AA

Current Rating20A

MountingSurface Mount

PolarityN-CHANNEL

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Technical Specifications

Onsemi HUF75329D3ST technical specifications.

General

Package/Case	TO-252AA
Continuous Drain Current (ID)	20A
Current Rating	20A
Drain to Source Breakdown Voltage	55V
Drain to Source Resistance	26mR
Drain to Source Voltage (Vdss)	55V
Drain-source On Resistance-Max	26MR
Element Configuration	Single
Fall Time	33ns
Gate to Source Voltage (Vgs)	20V
Height	7.49mm
Input Capacitance	1.06nF
Lead Free	Lead Free
Length	6.73mm
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Max Power Dissipation	128W
Mount	Surface Mount
Nominal Vgs	4V
Number of Elements	1
Package Quantity	1
Packaging	Tape and Reel
Polarity	N-CHANNEL
Power Dissipation	128W
Radiation Hardening	No
Rds On Max	26mR
Reach SVHC Compliant	No
RoHS Compliant	Yes
Series	UltraFET™
Turn-Off Delay Time	10ns
Turn-On Delay Time	7ns
DC Rated Voltage	55V
Weight	0.26037g
Width	2.39mm