N-Channel UltraFET Power MOSFET, 55V Drain to Source Breakdown Voltage, 20A Continuous Drain Current, and 26mΩ Max Drain to Source On Resistance. This single-element transistor features a TO-252AA surface mount package, 128W maximum power dissipation, and operates within a temperature range of -55°C to 175°C. Key switching characteristics include a 7ns turn-on delay and 33ns fall time. The component is RoHS compliant and supplied on a 2500-piece tape and reel.
PackageTO-252AA
Current Rating20A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi HUF75329D3ST technical specifications.
General
Package/Case
TO-252AA
Continuous Drain Current (ID)
20A
Current Rating
20A
Drain to Source Breakdown Voltage
55V
Drain to Source Resistance
26mR
Drain to Source Voltage (Vdss)
55V
Drain-source On Resistance-Max
26MR
Element Configuration
Single
Fall Time
33ns
Gate to Source Voltage (Vgs)
20V
Height
7.49mm
Input Capacitance
1.06nF
Lead Free
Lead Free
Length
6.73mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
128W
Mount
Surface Mount
Nominal Vgs
4V
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
128W
Radiation Hardening
No
Rds On Max
26mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
UltraFET™
Turn-Off Delay Time
10ns
Turn-On Delay Time
7ns
DC Rated Voltage
55V
Weight
0.26037g
Width
2.39mm
Compliance
RoHS
Compliant
Datasheet
Onsemi HUF75329D3ST Datasheet
Download the complete datasheet for Onsemi HUF75329D3ST to view detailed technical specifications.
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