N-Channel UltraFET Power MOSFET featuring a 55V drain-source breakdown voltage and 60A continuous drain current. This single-element transistor offers a low 19mΩ drain-to-source resistance and 145W maximum power dissipation. Designed for through-hole mounting in a TO-220AB package, it operates from -55°C to 175°C and boasts fast switching speeds with a 9ns turn-on delay. RoHS compliant and lead-free.
PackageTO-220AB
Current Rating60A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi HUF75332P3 technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 60A |
| Current Rating | 60A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Resistance | 19mR |
| Drain to Source Voltage (Vdss) | 55V |
| Element Configuration | Single |
| Fall Time | 45ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.3nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 145W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 400 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 145W |
| Radiation Hardening | No |
| Rds On Max | 19mR |
| RoHS Compliant | Yes |
| Series | UltraFET™ |
| Turn-Off Delay Time | 50ns |
| Turn-On Delay Time | 9ns |
| DC Rated Voltage | 55V |
| Weight | 1.8g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi HUF75332P3 Datasheet
Download the complete datasheet for Onsemi HUF75332P3 to view detailed technical specifications.
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