N-channel MOSFET, 55V drain-source breakdown voltage, 75A continuous drain current, and 9.5mΩ drain-source resistance at 10Vgs. Features a 270W maximum power dissipation and operates within a -55°C to 175°C temperature range. Packaged in a TO-263-3 surface-mount D2PAK, this component offers fast switching with an 18ns fall time and 32ns turn-off delay. RoHS compliant and lead-free.
PackageTO-263-3
Current Rating75A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi HUF75343S3ST technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 75A |
| Current Rating | 75A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Resistance | 9.5mR |
| Drain to Source Voltage (Vdss) | 55V |
| Fall Time | 18ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 3nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 270W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 270W |
| Rds On Max | 9mR |
| RoHS Compliant | Yes |
| Series | UltraFET™ |
| Turn-Off Delay Time | 32ns |
| DC Rated Voltage | 55V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi HUF75343S3ST Datasheet
Download the complete datasheet for Onsemi HUF75343S3ST to view detailed technical specifications.
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