N-Channel Power MOSFET featuring 55V drain-source breakdown voltage and 75A continuous drain current. This single element MOSFET offers a low 8mΩ drain-source on-resistance and 285W maximum power dissipation. Designed for through-hole mounting in a TO-247 package, it operates from -55°C to 175°C and includes fast switching characteristics with turn-on delay of 13ns and fall time of 57ns. RoHS compliant and lead-free.
PackageTO-247
Current Rating75A
MountingThrough Hole
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Onsemi HUF75344G3 technical specifications.
General
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 75A |
| Current Rating | 75A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Resistance | 8mR |
| Drain to Source Voltage (Vdss) | 55V |
| Drain-source On Resistance-Max | 8MR |
| Element Configuration | Single |
| Fall Time | 57ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 20.82mm |
| Input Capacitance | 3.2nF |
| Lead Free | Lead Free |
| Length | 15.87mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 285W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 285W |
| Rds On Max | 8mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | UltraFET™ |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 46ns |
| Turn-On Delay Time | 13ns |
| DC Rated Voltage | 55V |
| Weight | 6.39g |
| Width | 4.82mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi HUF75344G3 Datasheet
Download the complete datasheet for Onsemi HUF75344G3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
