N-Channel MOSFET, 55V Vds, 75A continuous drain current, and 7mΩ Rds On. Features a 325W power dissipation, 175°C max operating temperature, and TO-220AB through-hole package. Includes 26ns fall time, 42ns turn-off delay, and 14ns turn-on delay. RoHS compliant.
PackageTO-220AB
Current Rating75A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi HUF75345P3 technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
75A
Current Rating
75A
Drain to Source Breakdown Voltage
55V
Drain to Source Resistance
7mR
Drain to Source Voltage (Vdss)
55V
Drain-source On Resistance-Max
7mR
Dual Supply Voltage
55V
Element Configuration
Single
Fall Time
26ns
Gate to Source Voltage (Vgs)
20V
Height
16.3mm
Input Capacitance
4nF
Lead Free
Lead Free
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
325W
Mount
Through Hole
Nominal Vgs
4V
Number of Elements
1
Package Quantity
400
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
325W
Radiation Hardening
No
Rds On Max
7mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
UltraFET™
Threshold Voltage
4V
Turn-Off Delay Time
42ns
Turn-On Delay Time
14ns
DC Rated Voltage
55V
Weight
1.8g
Width
4.7mm
Compliance
RoHS
Compliant
Datasheet
Onsemi HUF75345P3 Datasheet
Download the complete datasheet for Onsemi HUF75345P3 to view detailed technical specifications.
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