N-Channel MOSFET for power applications, featuring a 55V drain-source breakdown voltage and a continuous drain current of 75A. This surface-mount device offers a low drain-source on-resistance of 7mΩ, with a maximum power dissipation of 325W. Designed for high-efficiency switching, it operates across a wide temperature range from -55°C to 175°C and is RoHS compliant. Key switching characteristics include a 14ns turn-on delay and a 26ns fall time.
PackageTO-263AB
Current Rating75A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi HUF75345S3ST technical specifications.
General
| Package/Case | TO-263AB |
| Continuous Drain Current (ID) | 75A |
| Current Rating | 75A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Resistance | 6mR |
| Drain to Source Voltage (Vdss) | 55V |
| Drain-source On Resistance-Max | 7mR |
| Element Configuration | Single |
| Fall Time | 26ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 4nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 325W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 325W |
| Rds On Max | 7mR |
| RoHS Compliant | Yes |
| Series | UltraFET™ |
| Turn-Off Delay Time | 42ns |
| Turn-On Delay Time | 14ns |
| DC Rated Voltage | 55V |
| Weight | 1.31247g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi HUF75345S3ST Datasheet
Download the complete datasheet for Onsemi HUF75345S3ST to view detailed technical specifications.
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