N-Channel UltraFET Power MOSFET featuring 80V drain-source breakdown voltage and 75A continuous drain current. This single-element transistor offers a low 14mΩ drain-source resistance (Rds On Max) and a maximum power dissipation of 230W. Designed for through-hole mounting in a TO-220AB package, it operates within a temperature range of -55°C to 175°C. Key switching characteristics include a 12.5ns turn-on delay and 80ns fall time, with an input capacitance of 2.75nF.
PackageTO-220AB
Current Rating75A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi HUF75542P3 technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 75A |
| Current Rating | 75A |
| Drain to Source Breakdown Voltage | 80V |
| Drain to Source Resistance | 14mR |
| Drain to Source Voltage (Vdss) | 80V |
| Element Configuration | Single |
| Fall Time | 80ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.75nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 230W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 230W |
| Rds On Max | 14mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | UltraFET™ |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 50ns |
| Turn-On Delay Time | 12.5ns |
| DC Rated Voltage | 80V |
| Weight | 1.8g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi HUF75542P3 Datasheet
Download the complete datasheet for Onsemi HUF75542P3 to view detailed technical specifications.
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