N-Channel UltraFET Power MOSFET featuring 100V drain-source breakdown voltage and 56A continuous drain current. Offers a low 25mΩ maximum drain-source on-resistance. Designed for through-hole mounting in a TO-220AB package, this single-element transistor operates from -55°C to 175°C with a maximum power dissipation of 200W. Key switching characteristics include a 15ns turn-on delay and 25ns fall time.
PackageTO-220AB
Current Rating56A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi HUF75639P3 technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 56A |
| Current Rating | 56A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 25mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 25mR |
| Element Configuration | Single |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.4mm |
| Input Capacitance | 2nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 200W |
| Radiation Hardening | No |
| Rds On Max | 25mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | UltraFET™ |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 15ns |
| DC Rated Voltage | 100V |
| Weight | 1.8g |
| Width | 4.83mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi HUF75639P3 Datasheet
Download the complete datasheet for Onsemi HUF75639P3 to view detailed technical specifications.
No datasheet is available for this part.