
N-Channel UltraFET Power MOSFET, 100V Vds, 56A Continuous Drain Current, 25mΩ Max Drain-Source On-Resistance. Features include a TO-263-3 surface mount package, 200W max power dissipation, and 175°C max operating temperature. This RoHS compliant component offers fast switching with turn-on delay of 15ns and fall time of 25ns. Supplied in an 800-piece tape and reel.
Onsemi HUF75639S3ST technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 56A |
| Current Rating | 56A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 25mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 25mR |
| Element Configuration | Single |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200W |
| Mount | Surface Mount |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 200W |
| Rds On Max | 25mR |
| RoHS Compliant | Yes |
| Series | UltraFET™ |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 15ns |
| DC Rated Voltage | 100V |
| Weight | 1.31247g |
| RoHS | Compliant |
Download the complete datasheet for Onsemi HUF75639S3ST to view detailed technical specifications.
No datasheet is available for this part.
