N-Channel Power MOSFET featuring 100V drain-source breakdown voltage and 75A continuous drain current. This UltraFET device offers a low 14mΩ drain-source on-resistance and 310W maximum power dissipation. Designed for through-hole mounting in a TO-220AB package, it operates from -55°C to 175°C. Key switching characteristics include a 14ns turn-on delay and 97ns fall time.
PackageTO-220AB
Voltage100V
Current75A
Current Rating75A
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Technical Specifications
Onsemi HUF75645P3 technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 75A |
| Current | 75A |
| Current Rating | 75A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 14mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 14mR |
| Fall Time | 97ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 16.3mm |
| Input Capacitance | 3.79nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 310W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 310W |
| Radiation Hardening | No |
| Rds On Max | 14mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | UltraFET™ |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 41ns |
| Turn-On Delay Time | 14ns |
| Voltage | 100V |
| DC Rated Voltage | 100V |
| Width | 4.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi HUF75645P3 Datasheet
Download the complete datasheet for Onsemi HUF75645P3 to view detailed technical specifications.
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