N-Channel Power MOSFET featuring 100V drain-source breakdown voltage and 75A continuous drain current. This UltraFET device offers a low 14mΩ drain-source on-resistance and 310W maximum power dissipation. Designed for through-hole mounting in a TO-220AB package, it operates from -55°C to 175°C. Key switching characteristics include a 14ns turn-on delay and 97ns fall time.
PackageTO-220AB
Voltage100V
Current75A
Current Rating75A
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Technical Specifications
Onsemi HUF75645P3 technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
75A
Current
75A
Current Rating
75A
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
14mR
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
14mR
Fall Time
97ns
Gate to Source Voltage (Vgs)
20V
Height
16.3mm
Input Capacitance
3.79nF
Lead Free
Lead Free
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
310W
Mount
Through Hole
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
310W
Radiation Hardening
No
Rds On Max
14mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
UltraFET™
Threshold Voltage
4V
Turn-Off Delay Time
41ns
Turn-On Delay Time
14ns
Voltage
100V
DC Rated Voltage
100V
Width
4.7mm
Compliance
RoHS
Compliant
Datasheet
Onsemi HUF75645P3 Datasheet
Download the complete datasheet for Onsemi HUF75645P3 to view detailed technical specifications.
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