
N-Channel UltraFET Power MOSFET featuring 100V drain-source breakdown voltage and 75A continuous drain current. This surface-mount device offers a low 14mΩ drain-source on-resistance and a maximum power dissipation of 310W. Operating across a wide temperature range of -55°C to 175°C, it boasts fast switching speeds with a turn-on delay of 14ns and fall time of 97ns. Packaged in TO-263AB on an 800-piece tape and reel, this RoHS compliant component is ideal for high-power applications.
Onsemi HUF75645S3ST technical specifications.
| Package/Case | TO-263AB |
| Continuous Drain Current (ID) | 75A |
| Current Rating | 75A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 14mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 14mR |
| Element Configuration | Single |
| Fall Time | 97ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 11.33mm |
| Input Capacitance | 3.79nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 310W |
| Mount | Surface Mount |
| Nominal Vgs | 4V |
| Number of Elements | 1 |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 310W |
| Radiation Hardening | No |
| Rds On Max | 14mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | UltraFET™ |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 41ns |
| Turn-On Delay Time | 14ns |
| DC Rated Voltage | 100V |
| Weight | 1.31247g |
| Width | 4.83mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi HUF75645S3ST to view detailed technical specifications.
No datasheet is available for this part.
