N-Channel Power MOSFET featuring 100V drain-source breakdown voltage and 75A continuous drain current. This single-element device offers a low 8mΩ drain-source on-resistance. Operating across a wide temperature range from -55°C to 175°C, it supports up to 515W power dissipation. The TO-247 package is designed for through-hole mounting.
PackageTO-247
Current Rating75A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi HUF75652G3 technical specifications.
General
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 75A |
| Current Rating | 75A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 8mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 8mR |
| Element Configuration | Single |
| Fall Time | 190ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 20.82mm |
| Input Capacitance | 7.585nF |
| Lead Free | Lead Free |
| Length | 15.87mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 515W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 515W |
| Rds On Max | 8mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | UltraFET™ |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 80ns |
| Turn-On Delay Time | 18.5ns |
| DC Rated Voltage | 100V |
| Weight | 6.39g |
| Width | 4.82mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi HUF75652G3 Datasheet
Download the complete datasheet for Onsemi HUF75652G3 to view detailed technical specifications.
No datasheet is available for this part.
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