N-Channel MOSFET, 20V drain-source breakdown voltage, 20A continuous drain current, and 18mΩ drain-source resistance at 10Vgs. Features a 50W maximum power dissipation and a TO-252AA surface mount package. Operates from -55°C to 150°C with a 20V gate-source voltage rating. Includes 29ns fall time and 37ns turn-off delay time.
PackageTO-252AA
Current Rating20A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi HUF76013D3ST technical specifications.
General
| Package/Case | TO-252AA |
| Continuous Drain Current (ID) | 20A |
| Current Rating | 20A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 18mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 29ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 624pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 50W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 50W |
| Rds On Max | 22mR |
| RoHS Compliant | Yes |
| Series | UltraFET™ |
| Turn-Off Delay Time | 37ns |
| DC Rated Voltage | 20V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi HUF76013D3ST Datasheet
Download the complete datasheet for Onsemi HUF76013D3ST to view detailed technical specifications.
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