The HUF76013P3 is a 20V, 20A, N-CHANNEL MOSFET in a TO-220-3 package, suitable for through hole mounting. It operates over a temperature range of -55°C to 150°C and is RoHS compliant. The device has a maximum power dissipation of 50W and a maximum drain to source resistance of 18mR.
PackageTO-220-3
Current Rating20A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi HUF76013P3 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 20A |
| Current Rating | 20A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 18mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 29ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 624pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 50W |
| Mount | Through Hole |
| Package Quantity | 400 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 50W |
| Rds On Max | 22mR |
| RoHS Compliant | Yes |
| Series | UltraFET™ |
| Turn-Off Delay Time | 37ns |
| DC Rated Voltage | 20V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi HUF76013P3 Datasheet
Download the complete datasheet for Onsemi HUF76013P3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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