N-channel MOSFET, 60V drain-source breakdown voltage, 29A continuous drain current. Features low 29mΩ drain-source resistance at VGS=10V, 75W maximum power dissipation, and TO-263-3 surface-mount package. Operates from -55°C to 175°C, with 74ns fall time and 27ns turn-off delay. RoHS compliant and lead-free.
PackageTO-263-3
Voltage60V
Current29A
Current Rating27A
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Technical Specifications
Onsemi HUF76419S3ST technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 29A |
| Current | 29A |
| Current Rating | 27A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 29mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 74ns |
| Gate to Source Voltage (Vgs) | 16V |
| Input Capacitance | 900pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 75W |
| Mount | Surface Mount |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 75W |
| Rds On Max | 35mR |
| RoHS Compliant | Yes |
| Series | UltraFET™ |
| Turn-Off Delay Time | 27ns |
| Voltage | 60V |
| DC Rated Voltage | 60V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi HUF76419S3ST Datasheet
Download the complete datasheet for Onsemi HUF76419S3ST to view detailed technical specifications.
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