N-channel MOSFET with 100V drain-source breakdown voltage and 10A continuous drain current. Features low 130mΩ drain-source on-resistance and 49W power dissipation. Operates from -55°C to 175°C, with fast switching times including 6ns turn-on delay and 28ns fall time. Packaged in TO-251-3 for through-hole mounting.
PackageTO-251-3
Current Rating10A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi HUF76609D3 technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 10A |
| Current Rating | 10A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 130mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 28ns |
| Gate to Source Voltage (Vgs) | 16V |
| Height | 2.517mm |
| Input Capacitance | 425pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 49W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 49W |
| Rds On Max | 160mR |
| RoHS Compliant | Yes |
| Series | UltraFET™ |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 6ns |
| DC Rated Voltage | 100V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi HUF76609D3 Datasheet
Download the complete datasheet for Onsemi HUF76609D3 to view detailed technical specifications.
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