N-channel MOSFET, 100V Drain-Source Voltage (Vdss), 20A Continuous Drain Current (ID). Features 41.5mR Drain-Source On-Resistance (Rds On Max), 110W Max Power Dissipation, and a TO-252AA (DPAK) surface-mount package. Operates from -55°C to 175°C with a 16V Gate-Source Voltage (Vgs). Includes 60ns fall time and 67ns turn-off delay time. RoHS compliant and lead-free.
PackageTO-252AA
Voltage100V
Current20A
Current Rating20A
Quick Jump:
Technical Specifications
Onsemi HUF76629D3S technical specifications.
General
| Package/Case | TO-252AA |
| Continuous Drain Current (ID) | 20A |
| Current | 20A |
| Current Rating | 20A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 41.5mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 60ns |
| Gate to Source Voltage (Vgs) | 16V |
| Input Capacitance | 1.285nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 110W |
| Mount | Surface Mount |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 110W |
| Rds On Max | 52mR |
| RoHS Compliant | Yes |
| Series | UltraFET™ |
| Turn-Off Delay Time | 67ns |
| Voltage | 100V |
| DC Rated Voltage | 100V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi HUF76629D3S Datasheet
Download the complete datasheet for Onsemi HUF76629D3S to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
