N-Channel Logic Level Power MOSFET featuring 100V drain-source breakdown voltage and 50A continuous drain current. This surface-mount device offers a low 26mΩ drain-source on-resistance and 180W maximum power dissipation. Designed for high-efficiency switching, it operates within a temperature range of -55°C to 175°C and is supplied in tape and reel packaging.
PackageTO-263-3
Current Rating50A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi HUF76639S3ST technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 51A |
| Current Rating | 50A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 23mR |
| Drain to Source Voltage (Vdss) | 100V |
| Element Configuration | Single |
| Fall Time | 110ns |
| Gate to Source Voltage (Vgs) | 16V |
| Input Capacitance | 2.4nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 180W |
| Mount | Surface Mount |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 180W |
| Radiation Hardening | No |
| Rds On Max | 26mR |
| RoHS Compliant | Yes |
| Series | UltraFET™ |
| Turn-Off Delay Time | 151ns |
| Turn-On Delay Time | 10ns |
| DC Rated Voltage | 100V |
| Weight | 1.31247g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi HUF76639S3ST Datasheet
Download the complete datasheet for Onsemi HUF76639S3ST to view detailed technical specifications.
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