N-Channel UltraFET Power MOSFET featuring a 55V drain-source breakdown voltage and 2.6A continuous drain current. This surface mount component offers a low 90mΩ drain-to-source resistance and a maximum power dissipation of 1.1W. Designed for automotive applications and AEC-Q101 qualified, it operates within a temperature range of -55°C to 150°C. Packaged in a SOT-223 case on a 4000-piece tape and reel, this RoHS compliant MOSFET boasts fast switching speeds with a 5ns turn-on delay.
PackageSOT-223
Current Rating2.6A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi HUFA75307T3ST technical specifications.
General
| Package/Case | SOT-223 |
| Continuous Drain Current (ID) | 2.6A |
| Current Rating | 2.6A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Resistance | 90mR |
| Drain to Source Voltage (Vdss) | 55V |
| Element Configuration | Single |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.8mm |
| Input Capacitance | 250pF |
| Lead Free | Lead Free |
| Length | 6.7mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.1W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.1W |
| Radiation Hardening | No |
| Rds On Max | 90mR |
| RoHS Compliant | Yes |
| Series | Automotive, AEC-Q101, UltraFET™ |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 5ns |
| DC Rated Voltage | 55V |
| Weight | 0.188g |
| Width | 3.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi HUFA75307T3ST Datasheet
Download the complete datasheet for Onsemi HUFA75307T3ST to view detailed technical specifications.
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