N-Channel Power MOSFET featuring 55V drain-source breakdown voltage and 20A continuous drain current. This UltraFET® device offers a low 36mΩ drain-to-source resistance (Rds On Max) and a maximum power dissipation of 93W. Designed for surface mounting in a TO-252AA package, it operates across a temperature range of -55°C to 175°C. The component exhibits fast switching characteristics with a turn-on delay of 11ns and a fall time of 66ns. Packaged on a 2500-piece tape and reel, this RoHS compliant MOSFET is lead-free.
PackageTO-252AA
Current Rating20A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi HUFA75321D3ST technical specifications.
General
| Package/Case | TO-252AA |
| Continuous Drain Current (ID) | 20A |
| Current Rating | 20A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Resistance | 36mR |
| Drain to Source Voltage (Vdss) | 55V |
| Element Configuration | Single |
| Fall Time | 66ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 680pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 93W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 93W |
| Radiation Hardening | No |
| Rds On Max | 36mR |
| RoHS Compliant | Yes |
| Series | UltraFET™ |
| Turn-Off Delay Time | 47ns |
| Turn-On Delay Time | 11ns |
| DC Rated Voltage | 55V |
| Weight | 0.26037g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi HUFA75321D3ST Datasheet
Download the complete datasheet for Onsemi HUFA75321D3ST to view detailed technical specifications.
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